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61.
1 Introduction There are two ways ,the multi-wire sawslicing method and the inner-diameter blade slicing method,re-cently used for cutting wafers froma single crystal ingot . Multi-wire sawbecomes more popular iningot slicingprocesses ,because it has an advantage for slicinglarge diameter or long siliconingot and has efficiency for massproduction.However ,this method is difficult to control the wire cutting the ingot along its crystal orientationandit is less correspond to the request of some …  相似文献   
62.
Plastic deformation is an unlikely process by which to mould pristine silicon wafers into three-dimensional shapes owing to the inevitable detrimental impact that the resulting mechanically induced defects would have on their electrical properties. However, if one were to find a way of doing so without substantial degradation of these properties, a range of new applications might be opened up. Here we report on the successful plastic deformation of silicon crystal wafers for the preparation of wafers with various shapes. A silicon wafer was set between dies and pressed at high temperatures. One application of shaped wafers is as well-shaped concave silicon crystal lenses or mirrors. The lattice plane of such a crystal lens has a curvature exactly along the surface. A concave spheroidal X-ray lens, in the form of two-dimensional Johann and Johansson's monochromators, is proposed for an X-ray optical component system. We propose and demonstrate a new solar cell system with the concave silicon crystal mirror used as both a solar cell and a focused mirror. This system can make use of the reflected photons from solar cells.  相似文献   
63.
Suppose that some particular link in the Internet is currently congested. A natural solution is to try to make packets bypass that link. This can be done by increasing the cost of that link intentionally, say from a 1 to a 2, since the Internet uses shortest-path routing. Unfortunately, however, this often causes temporary loops for packet traveling, called routing loops. In this paper we show that routing loops can be avoided by increasing the cost of the link not directly from a 1 to a 2 but through an intermediate value, a 3, i.e., from a 1 to a 3 and then to a 2. We may need several intermediate values. We show that in this case the greedy strategy, namely, raising the cost as much as possible in each step, is optimal.  相似文献   
64.
We present a methodology of controlling machines using spoken language commands. The two major problems relating to the speech interfaces for machines, namely, the interpretation of words with fuzzy implications and the out-of-vocabulary (OOV) words in natural conversation, are investigated. The system proposed in this paper is designed to overcome the above two problems in controlling machines using spoken language commands. The present system consists of a hidden Markov model (HMM) based automatic speech recognizer (ASR), with a keyword spotting system to capture the machine sensitive words from the running utterances and a fuzzy-neural network (FNN) based controller to represent the words with fuzzy implications in spoken language commands. Significance of the words, i.e., the contextual meaning of the words according to the machine's current state, is introduced to the system to obtain more realistic output equivalent to users' desire. Modularity of the system is also considered to provide a generalization of the methodology for systems having heterogeneous functions without diminishing the performance of the system. The proposed system is experimentally tested by navigating a mobile robot in real time using spoken language commands.  相似文献   
65.
Pure Fe with coverage of 0.5-2.0 nm was deposited on Si (111) 7×7 surfaces by reactive deposition epitaxy (RDE) in an integrated ultrahigh vacuum (UHV) system. Transmission electron microscopy (TEM) confirmed that the as-deposited epitaxial phase exhibits rod-like and equilateral triangular morphology. The as-deposited phase was identified as c-FeSi2 by electron diffraction and high-resolution transmission electron microscopy. It was found that there exists lattice distortion in epitaxial c-FeSi2 phase. Upon annealing at 1073 K, the metastable c-FeSi2 transforms into equilibrium β-FeSi2 phase, the latter inherits completely the morphology of c-FeSi2 phase. Based on RDE and subsequent annealing, a new fabrication technique to grow rod-like semiconducting β-FeSi2 on a Si substrate has been proposed in the present work.  相似文献   
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